Influence of microstructure on the electrical properties of NASICON materials

Authors
Fuentes, RO Figueiredo, FM Marques, FMB Franco, JI
Citation
Ro. Fuentes et al., Influence of microstructure on the electrical properties of NASICON materials, SOL ST ION, 140(1-2), 2001, pp. 173-179
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE IONICS
ISSN journal
01672738 → ACNP
Volume
140
Issue
1-2
Year of publication
2001
Pages
173 - 179
Database
ISI
SICI code
0167-2738(200103)140:1-2<173:IOMOTE>2.0.ZU;2-L
Abstract
NASICON-type compounds with the nominal formula, Na3Si2Zr1.88Y0.12PO12, wer e prepared by a typical ceramic route with different microstructures. The s amples were fired in the temperature range 1190-1235 degreesC with sinterin g periods between 2 and 80 h. Results showed a significant influence of the processing conditions on the microstructure, affecting both grain and grai n boundaries. Electrical conductivity was mainly controlled by the grain bo undary contribution, which is strongly dependent on the grain size and dens ity of grain boundaries. A maximum conductivity value of about 2.7 X 10(-3) S cm(-1) at room temperature was obtained with samples sintered at 1220 de greesC for 40 h. (C) 2001 Elsevier Science B.V. All rights reserved.