Modeling of complete suppression of boron out-diffusion in Si1-xGex by carbon incorporation

Authors
Rajendran, K Schoenmaker, W
Citation
K. Rajendran et W. Schoenmaker, Modeling of complete suppression of boron out-diffusion in Si1-xGex by carbon incorporation, SOL ST ELEC, 45(2), 2001, pp. 229-233
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
2
Year of publication
2001
Pages
229 - 233
Database
ISI
SICI code
0038-1101(200102)45:2<229:MOCSOB>2.0.ZU;2-Z
Abstract
In this paper, we demonstrate a simple modeling of boron diffusion in Si1-x -yGexCy by manipulating the strain and the intrinsic carl icr concentration . We show that the diffusion of boron is strongly suppressed by a moderate concentration of substitutional C in Si1-xGex. This suppression is due to a n under-saturation of Si self-interstitials in the C-rich region. The resul ts obtained from the proposed model are in better agreement with the measur ed values. (C) 2001 Elsevier Science Ltd. All rights reserved.