An asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

In this study, we discuss a vertical p-type metal-oxide-semiconductor held- effect transistor device structure with an asymmetric Si/Si1-xGex deep subm icron (100 nm) channel. The source and source end of the channel are made o f Si while rest of the channel and the drain are made of strained Si1-xGex. Compared with conventional Si device, the drive current of this asymmetric channel device is improved due to high electric held near the source end, high pinchoff voltage and high hole mobility in the strained Si1-xGex layer . The short channel effects and punchthrough are not degraded because the s ource and channel junction is made of Si, instead of strained Si1-xGex whic h has a smaller band gap. (C) 2001 Elsevier Science Ltd. All rights reserve d.