Effect of exponentially distributed deep levels on the current and capacitance of a MIS diode

An exponential distribution of deep level impurities has been considered to evaluate the current and capacitance of MIS diode with special reference t o recombination effect modified for distributed defects. The de current and conductance of the device have been found to vary non-lineally in logarith mic scale mainly because of recombination at lower voltages. Likewise, the capacitance of the device is also influenced due to the presence of exponen tially distributed defects. The investigation reveals a distinct non-linear ity in the I/C-2 vs, V characteristics with concavity upward or downward de termined by the parametric values of the defects. The nature of variation o f I-V and C-V characteristics have been found much sensitive to the paramet ers controlling the defect distribution. (C) 2001 Elsevier Science Ltd. All rights reserved.