Sh. Kang et E. Shin, A three-dimensional nonlinear analysis of electromigration-induced resistance change and Joule heating in microelectronic interconnects, SOL ST ELEC, 45(2), 2001, pp. 341-346
This paper reports a three-dimensional nonlinear numerical model developed
for the deep submicron interconnects that carry high current densities in i
ntegrated circuits. This model can solve a thermoelectrically coupled field
to analyze resistance variation and Joule heating as a function of electro
migration-induced voiding in various interconnect structures. As a result,
the model can identify the critical void volume that is directly related to
the time to electromigration failure. The model is particularly useful as
an analytical tool that can quantitatively evaluate the effects of the arch
itecture and physical properties of various refractory films and diffusion
barriers on the electromigration reliability. (C) 2001 Elsevier Science Ltd
. All rights reserved.