A three-dimensional nonlinear analysis of electromigration-induced resistance change and Joule heating in microelectronic interconnects

Authors
Citation
Sh. Kang et E. Shin, A three-dimensional nonlinear analysis of electromigration-induced resistance change and Joule heating in microelectronic interconnects, SOL ST ELEC, 45(2), 2001, pp. 341-346
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
2
Year of publication
2001
Pages
341 - 346
Database
ISI
SICI code
0038-1101(200102)45:2<341:ATNAOE>2.0.ZU;2-U
Abstract
This paper reports a three-dimensional nonlinear numerical model developed for the deep submicron interconnects that carry high current densities in i ntegrated circuits. This model can solve a thermoelectrically coupled field to analyze resistance variation and Joule heating as a function of electro migration-induced voiding in various interconnect structures. As a result, the model can identify the critical void volume that is directly related to the time to electromigration failure. The model is particularly useful as an analytical tool that can quantitatively evaluate the effects of the arch itecture and physical properties of various refractory films and diffusion barriers on the electromigration reliability. (C) 2001 Elsevier Science Ltd . All rights reserved.