Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates

Citation
Gb. Galiev et al., Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates, TECH PHYS, 46(4), 2001, pp. 411-416
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
46
Issue
4
Year of publication
2001
Pages
411 - 416
Database
ISI
SICI code
1063-7842(2001)46:4<411:SOTSPA>2.0.ZU;2-#
Abstract
Silicon distribution before and after thermal annealing in thin doped GaAs layers grown by molecular beam epitaxy on (100)-, (111)A-, (111)B-oriented substrates is studied by X-ray diffraction and SIMS. The surface morphology of the epitaxial films inside and outside an ion etch crater that arises d uring SIMS measurements is studied by atomic force microscopy. Distinctions in the surface relief inside the crater for different orientations have be en revealed. Observed differences in the doping profiles are explained by f eatures of the surface relief developing in the course of ion etching in SI MS measurements and by enhanced Si diffusion via growth defects. (C) 2001 M AIK "Nauka/ Interperiodica".