Mass transfer in non-steady-state hydride epitaxy of Si1-xGex/Si structures

Numerical simulation of the non-steady-state kinetics for the solid solutio ns MBE-grown from silane and germane with vapor sources was carried out. Th e smearing of the germanium distribution at the interfaces in the Si1-xGex/ Si structures was studied both in the absence of the atomic fluxes in the r eactor and in their presence (the "hot-wire" method). It is shown that the use of an additional hot source enhances the growth. Moreover, at gas press ures exceeding 10(-3) torr (provided that the gas flow remains molecular) a nd at growth temperatures T-gr < 600 degreesC, such conditions can minimize the width of the transition regions at the interfaces. (C) 2001 MAIK "Nauk a/Interperiodica".