Study of the effect of manganese impurities on dielectric characteristics of BSTO films

Authors
Karmanenko, SF Dedyk, AI Isakov, NN Gordeichuk, AS Semenov, AA Ter-Martirosyan, LT Hagberg, J
Citation
Sf. Karmanenko et al., Study of the effect of manganese impurities on dielectric characteristics of BSTO films, TECH PHYS, 46(4), 2001, pp. 498-502
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
46
Issue
4
Year of publication
2001
Pages
498 - 502
Database
ISI
SICI code
1063-7842(2001)46:4<498:SOTEOM>2.0.ZU;2-C
Abstract
Capacitance voltage and current voltage characteristics of BSTO ferroelectr ic films containing a manganese dioxide impurity (similar to 1.5-2 mol %) a re compared to those of impurity-free samples. It is shown that in Mn-doped samples tan delta drops to 10(-3), and the dependence of tan delta on the applied voltage changes as well. IVCs of these samples are strictly ohmic a nd do not show a nonlinearity at high voltages. A mechanism is proposed of the effect of Mn on the charge state of the defects comprising oxygen vacan cies in BSTO films. (C) 2001 MAIK "Nauka/Interperiodica".