Characterization of(Ti,Al)N films deposited by pulsed d.c. plasma-enhancedchemical vapor deposition

Ti0.58Al0.42 N(upper)/TiN(lower) double-layered films were prepared on stee l substrates by pulsed d.c. plasma-enhanced chemical vapor deposition (PECV D) at 823 K using gas mixtures of TiCl4, AlCl3, N-2, H-2 and Ar. We evaluat ed structural, compositional, mechanical and chemical properties of the fil ms. Glow discharge optical emission spectroscopy (GDOS) analysis revealed t hat the chlorine concentration was much lower in the upper-layered Ti0.58Al 0.48N film than in the lower-layered TiN film. X-Ray diffraction (XRD) anal ysis showed that the upper-layered Ti0.58Al0.42N film had the same NaCl str ucture as TiN. The double-layered films had high oxidation resistance, a lo w friction coefficient and high wear resistance. Furthermore, the double-la yered films demonstrated the superior soldering and corrosion resistance in a molten aluminum alloy at 953 K. (C) 2001 Elsevier Science B.V. All right s reserved.