Properties of V2O5 thin films deposited by means of plasma MOCVD

The deposition of V2O5 thin film, which is the candidate of the electrochro mic material, by the microwave plasma MOCVD with bis-acetylacetonatovanadyl as a vanadium precursor on the indium tin oxide (ITO) thin film coated fus ed silica substrate in the similar method with trisacetylacetonatoindium an d dipivaloylmethanatotin as indium and tin precursors. The deposit on the I TO film coated fused silica substrate was identified as slightly oxygen def icient V2O5 by means of X-ray diffraction and X-ray photoelectron spectrosc opy. The transmittance and the absorption edge were 70% and 400 nm, respect ively. The cyclic voltammogram measured in a 1 M LiClO4/gamma -butyrolacton e electrolyte, a voltammogram due to the reduction of vanadium atom was ide ntified and the variation of color of the film was observed. The deposit wa s suitable for the electrochromic material. (C) 2001 Elsevier Science B.V. All rights reserved.