The production technique of thin film is described by using sheet-shaped el
ectron cyclotron resonance heating (ECRH) plasma supplemented with RF plasm
a source for controlling the plasma parameters. The deposition rate of thin
film onto the substrate can be varied from 6 to 102 nm/min depending on th
e experimental conditions. The thin film is almost uniformly formed over th
e wide range of plasma parameters. The present experimental technique can b
e applied to the plasma source for material processing such as thin film, s
emiconductor devices, and so on. (C) 2001 Elsevier Science B.V. All rights
reserved.