The infrared photoconductivity spectroscopy has been employed to investigat
e the deep levels in semi-insulating p-type Zn0.04Cd0.96Te. At the temperat
ure ranging between 4.2 and 165K, photoconductivity peaks at 0.24,0.34,0.38
, 0.47,0.55 and 0.80eV are observed. In conjunction with the photoluminesce
nce measurement of the sample at 4.2K, the characteristics of the deep leve
ls related to the photoconductivity peaks are discussed.