Control of the surface reactions during the low-temperature growth of polycrystalline silicon films

Polycrystalline silicon (poly-Si) thin films were prepared by a remote micr owave plasma-enhanced chemical vapor deposition technique at low temperatur es using SiF4 and H-2 as reactive gases. It was found that the impact of th e charged particles in the plasma on the growing surface significantly affe cts the surface reactions and the crystallinity of the resultant films. By applying the bias on the substrates to decelerate the particles, high-quali ty poly-Si films, with hydrogen content less than 0.9 at% and the FWHM of 5 20 cm(-1) Raman peak as narrow as 4.4 cm(-1),have been obtained at a low te mperature of 360 degreesC.