Study on alpha-C : F films deposited by electron cyclotron resonance plasma chemical vapor deposition

Amorphous fluorinated carbon (alpha -C:F) films with F/C ratios between 0.1 1 and 0.62 are prepared by microwave electron cyclotron resonance plasma en hanced chemical vapor deposition using trifluoromethane (CHF3) and benzene (C6H6) as source gases. The effect of microwave input powers on the deposit ion rates,F/C ratios and the bond configurations of films is analyzed by fi lm thickness measured, Fourier transform infrared and X-ray photoelectron s pectroscopy analysis. The increase of microwave power results in the increa se of deposition rate, the decrease of F/C ratios, and the abundance of CF and CF3 groups of the films. The abundance of CF2 groups almost does not va ry as microwave power increases. The films are mainly composed of CF2 group s and C=C bonds can be obtained at higher microwave power. The frequency de pendence of epsilon (1 x 10(3)-1 x 10(6)Hz) and tan delta (1 x 10(2)-1 x 10 (5)Hz) all follow a power law. The electron polarization is the main contri butor to dielectric polarization of film.