A method to characterize n(+)-polysilicon/oxide interface traps in ultrathin oxides

In this study, a new method to characterize the n(+)-polysilicon/oxide inte rface trap state by measuring the gate voltage-gate leakage current (Vg-Jg) characteristics under the low electric field is developed. These traps are neutral and consist of the fast and slow trap states located near the Ferm i level of the n(+)-polyoxide. We use the first order rate equation to char acterize the relationship between the gate leakage current and the gate vol tage sweep rate. A simple formula to characterize the detrapping behavior o f the slow trap states with the detrapping time constant was derived. It is important to find that the smaller detrapping time constant observed in a thinner oxide (2.5 nm) is due to the field enhanced detrapping effect. (C) 2001 The Electrochemical Society.