Self-induced voltage oscillations during anodic etching of n-InP and possible applications for three-dimensional microstructures

Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current den sity. Under certain conditions, the oscillations lead to a synchronous modu lation of the diameters of pores on large areas of the samples which indica tes a correlation between the phases of the oscillations in the pores. Thes e self-induced diameter oscillations may be useful for three-dimensional mi crostructuring of n-InP and thus for the design and fabrication of new phot onic materials. (C) 2001 The Electrochemical Society.