Dark current reduction in APD with BCB passivation

Authors
Kim, HS Choi, JH Bang, HM Jee, Y Yun, SW Burm, J Kim, MD Choo, AG
Citation
Hs. Kim et al., Dark current reduction in APD with BCB passivation, ELECTR LETT, 37(7), 2001, pp. 455-457
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
7
Year of publication
2001
Pages
455 - 457
Database
ISI
SICI code
0013-5194(20010329)37:7<455:DCRIAW>2.0.ZU;2-F
Abstract
Mesa-structure SL-APDs were fabricated using three different passivation ma terials. benzocyclobutene (BCB). polyimide and SiNv. The best dark current was from BCB passivated devices with a mesa-diameter or 30 mum was 38nA whe n operated. approximately a factor of 10 improvement compared with other re ports.