Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence

Authors
Gramlich, S Nebauer, E Sebastian, J Beister, G
Citation
S. Gramlich et al., Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence, ELECTR LETT, 37(7), 2001, pp. 463-464
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
7
Year of publication
2001
Pages
463 - 464
Database
ISI
SICI code
0013-5194(20010329)37:7<463:DPOHII>2.0.ZU;2-F
Abstract
The extension of the damaged region in a GaAs/AlGaAs taper system after hel ium isolation implantation was investigated for different energies using th e photoluminescence from GaAs quantum wells. It was Found that the range of created defects is in good agreement with the results of TRIM simulations fur vacancies.