Kv. Vassilevski et al., Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode, ELECTR LETT, 37(7), 2001, pp. 466-467
4H-SiC single drift p(+)-n-n(+) IMPATT diodes have been fabricated and char
acterised. The diodes have avalanche breakdown voltages of similar to 290V.
Microwave oscillations appeared in X-band at a threshold current of 0.3A.
The maximum output power of 300mW was measured at an input pulsed current o
f 0.35A.