Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode

Authors
Vassilevski, KV Zorenko, AV Zekentes, K
Citation
Kv. Vassilevski et al., Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode, ELECTR LETT, 37(7), 2001, pp. 466-467
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
7
Year of publication
2001
Pages
466 - 467
Database
ISI
SICI code
0013-5194(20010329)37:7<466:EOOMOP>2.0.ZU;2-9
Abstract
4H-SiC single drift p(+)-n-n(+) IMPATT diodes have been fabricated and char acterised. The diodes have avalanche breakdown voltages of similar to 290V. Microwave oscillations appeared in X-band at a threshold current of 0.3A. The maximum output power of 300mW was measured at an input pulsed current o f 0.35A.