High-performance 5.2GHz LNA with on-chip inductor to provide ESD protection

Authors
Leroux, P Steyaert, M
Citation
P. Leroux et M. Steyaert, High-performance 5.2GHz LNA with on-chip inductor to provide ESD protection, ELECTR LETT, 37(7), 2001, pp. 467-469
Citations number
2
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
7
Year of publication
2001
Pages
467 - 469
Database
ISI
SICI code
0013-5194(20010329)37:7<467:H5LWOI>2.0.ZU;2-J
Abstract
A new ESD protection methodology for high-frequency CMOS LNAs is introduced . An on-chip inductor is employed to drain off the hazardous ESD charge whi le tuning out the harmful parasitic input capacitance. A 5.2GHz LNA has bee n designed. attaining high RF performance while providing a high level of E SD protection.