WAVELENGTH CHIRP AND DEPENDENCE OF CARRIER TEMPERATURE ON CURRENT IN MQW INGAASP-INP LASERS

In this paper, we derive a relation between the wavelength chirp and c arrier temperature in semiconductor lasers, The coefficient relating t he change in carrier temperature and chirp is expressed in terms of th e temperature derivative of the optical gain, and two parameters descr ibing the variation of refractive index produced by the variation of o ptical gain due to change of carrier quasi-Fermi level separation or c arrier temperature, We have measured these parameters for MQW InGaAsP lasers. Using this data, we estimated the rate of the temperature incr ease with current above threshold ire these devices, which is 0.13 K/m A.