RECENT ADVANCES IN SB-BASED MIDWAVE-INFRARED LASERS

Authors
HASENBERG TC MILES RH KOST AR WEST L
Citation
Tc. Hasenberg et al., RECENT ADVANCES IN SB-BASED MIDWAVE-INFRARED LASERS, IEEE journal of quantum electronics, 33(8), 1997, pp. 1403-1406
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
33
Issue
8
Year of publication
1997
Pages
1403 - 1406
Database
ISI
SICI code
0018-9197(1997)33:8<1403:RAISML>2.0.ZU;2-7
Abstract
Several midwave-infrared (MWIR) lasers have been demonstrated, includi ng 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-mu m diodes, The devices util ize multiple-quantum-well (MQW) active regions in which the quantum we lls (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's), I nGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlat tices are employed as cladding layers, We have observed pulsed laser o peration up to 255 K with 3.2-mu m devices. Typical pulsed output powe rs for these devices at 200 K are over 50 mW.