Ds. Kim et al., OPTOELECTRONIC INP-INGAAS SMART PIXELS FOR OPTICAL INTERCONNECTIONS AND COMPUTING, IEEE journal of quantum electronics, 33(8), 1997, pp. 1407-1416
We describe InP-InGaAs optoelectronic smart pixels for applications in
optical interconnection and computing, These circuits consist of mono
lithically integrated p-i-n photodiodes, heterojunction bipolar transi
stor (HBT) receivers and transmitters, and surface-bonded folded-cavit
y surface-emitting lasers (FCSEL's), Design, fabrication, and performa
nce of two different circuits: a high-sensitivity pixel, and a high-ba
ndwidth pixel with logic functions are discussed. We achieve a minimum
switching energy of 6 fJ, a maximum pixel bandwidth of 800 MHz, and a
n optoelectronic gain of 3. To our knowledge, these are the best overa
ll performance characteristics of any optoelectronic smart pixel techn
ology and are competitive or superior to that achieved using all-elect
ronic interconnects.