OPTOELECTRONIC INP-INGAAS SMART PIXELS FOR OPTICAL INTERCONNECTIONS AND COMPUTING

Citation
Ds. Kim et al., OPTOELECTRONIC INP-INGAAS SMART PIXELS FOR OPTICAL INTERCONNECTIONS AND COMPUTING, IEEE journal of quantum electronics, 33(8), 1997, pp. 1407-1416
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
33
Issue
8
Year of publication
1997
Pages
1407 - 1416
Database
ISI
SICI code
0018-9197(1997)33:8<1407:OISPFO>2.0.ZU;2-G
Abstract
We describe InP-InGaAs optoelectronic smart pixels for applications in optical interconnection and computing, These circuits consist of mono lithically integrated p-i-n photodiodes, heterojunction bipolar transi stor (HBT) receivers and transmitters, and surface-bonded folded-cavit y surface-emitting lasers (FCSEL's), Design, fabrication, and performa nce of two different circuits: a high-sensitivity pixel, and a high-ba ndwidth pixel with logic functions are discussed. We achieve a minimum switching energy of 6 fJ, a maximum pixel bandwidth of 800 MHz, and a n optoelectronic gain of 3. To our knowledge, these are the best overa ll performance characteristics of any optoelectronic smart pixel techn ology and are competitive or superior to that achieved using all-elect ronic interconnects.