A novel in-situ SOI characterization technique: The intrinsic point-probe MOSFET

This letter presents a novel, simple yet powerful method, called the intrin sic point-probe MOSFET technique, dedicated to accurate in situ evaluation of SOI material electrical parameters. The proposed method is free of paras itic series resistances and particularly adapted for both static and dynami c investigations. It is essentially based on the inspection of the intrinsi c conductance of the inversion channel induced by the substrate bias acting asa gate. Analytical models of the intrinsic conductance and related param eter extraction procedures are presented and validated on state-of-the-art Unibond wafers.