Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension

A novel Schottky barrier thin-film transistor (SBTFT) with silicided source /drain and field-induced drain (FID) extension is proposed and demonstrated . In the new device configuration, a metal field-plate (or sub-gate) lying on the passivation oxide is employed to induce a sheet of carriers in a cha nnel offset region located between the silicided drain and the active chann el region underneath the main-gate. The new device thus allows ambipolar de vice operation by simply switching the polarity of the bias applied to the field plate. In contrast to the conventional SBTFT that suffers from high G IDL (gate-induced drain leakage)-like off-state leakage current, the new SB TFT with FID is essentially free from the GIDL-like leakage current. In add ition, unlike the conventional SBTFT that suffers from the low on-off curre nt ratio, the new device exhibits high on/off current ratio up to 10(6) for both n- and p-channel modes of operation. Moreover, the implantless featur e and the ambipolar capability of the new device also result in extra low m ask count for CMOS processes integration. These excellent device characteri stics, coupled with its simple processing, make the new device very promisi ng for future large-area electronic applications.