High performance Si/Si1-Ge-x(x) resonant tunneling diodes

Resonant tunneling diodes (RTDs) with strained i-Si0.4Ge0.6 potential barri ers and a strained i-Si quantum well, all on a relaxed Si0.8Ge0.2 virtual s ubstrate were successfully grown by ultra high vacuum compatible chemical v apor deposition and fabricated using standard Si processing methods. A larg e peak to valley current ratio of 2.9 and a peak current density of 4.3 kA/ cm(2) at room temperature were recorded from pulsed and continuous dc curre nt-voltage measurements, the highest reported values to date for Si/Si1-xGe x RTDs. These de figures of merit and material system render such structure s suitable and highly compatible with present high speed and low power Si/S i1-xGex heterojunction field effect transistor based integrated circuits.