Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation

The equivalent circuit parameters of resonant tunneling diodes (RTD) are ex tracted from numerical simulation results for RTDs. The RTD models used in this paper are double barrier structures. The influence of the resonant tun neling structure (RTS) parameters, such as the height of barriers, the widt h of the quantum well, the width of the spacers, and the width of the barri ers, on the device parameters are systematically discussed. The effects of device temperature on device parameters are also discussed. Scattering betw een electrons and phonons greatly affects device parameters thereby the fun ction of the RTDs. Physical explanations about how the structure parameters and device temperature influence the device parameters are provided. Based on the analysis results, a general way to get a RTD oscillator with a high er maximum frequency is suggested.