GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

The N-channel depletion-mode GaAs MOSFETs with a liquid phase chemical enha nced selective gate oxide grown at low temperature are demonstrated, The pr oposed selective oxidation method makes the fabrication process of GaAs MOS FETs more reliable and self side-wall passivation possible. The fabricated GaAs MOSFETs exhibit current-voltage characteristics with complete pinch-of f and saturation characteristics. The 2 mum gate-length MOSFETs with a gate oxide thickness of 35 nm shows the transconductance larger than 80 mS/mm a nd the maximum drain current density of 380 mA/mm, In addition, the microwa ve characteristics with f(T) of 1.8 GHz and f(max) of 5.2 GHz have been ach ieved from the 3 mum x 60 mum GaAs MOSFETs.