Temperature dependent studies of InP/InGaAs avalanche photodiodes based ontime domain modeling

Using a simplified time domain modeling approach, the temperature dependent performance characteristics, such as multiplication gain, breakdown voltag e, -3 db bandwidth, gain-bandwidth product and excess noise factor, have be en systematically investigated for InP/InGaAs separate absorption, grading, charge and multiplication avalanche photodiodes as a function of temperatu re from -50 degreesC to 110 degreesC. In order to model the -3 dB bandwidth vsersus gain dependence based on the simplified approach, empirical expres sions have been proposed to consider the effects of hole diffusion, hole tr apping, RC (resistance-capacitance) and gain-bandwidth product limit togeth er with the fast Fourier transformation component of the impulse response f rom the time domain modeling. The modeling results generally agree with or can explain the corresponding experimental results. The effects of changing material parameters on the modeling results are also discussed, In additio n, wt: have found that E-r0, the average energy loss per collision due to o ptical phonon scattering at 0 K, plays a dominant role In determining the - 3 db bandwidth near breakdown and the slope of the temperature dependence o f the breakdown voltage. Further, the improved performance characteristics at decreased temperatures indicate the potential application prospects of t he InP/InGaAs APDs in low temperature environments.