"Gated-diode" in SOI MOSFETs: A sensitive tool for characterizing the buried Si/SiO2 interface

Authors
Zhao, XJ Ioannou, DE
Citation
Xj. Zhao et De. Ioannou, "Gated-diode" in SOI MOSFETs: A sensitive tool for characterizing the buried Si/SiO2 interface, IEEE DEVICE, 48(4), 2001, pp. 685-687
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
4
Year of publication
2001
Pages
685 - 687
Database
ISI
SICI code
0018-9383(200104)48:4<685:"ISMAS>2.0.ZU;2-Z
Abstract
A "gated-diode" technique is described for the measurement of the interface state density of the silicon film/buried oxide interface of SOI MOSFETs. T his approach becomes possible by taking advantage of the front gate, which is biased to inversion (NMOSFET) or accumulation (BC-PMOSFET) during the me asurement, while scanning the back interface through depletion. Using this technique the estimated value of the buried interface state density of typi cal lo,v dose SIMOX MOSFETs was slightly over 10(11)/cm(2).