SOI thermal impedance extraction methodology and its significance for circuit simulation

The buried-oxide in SOI MOSFET inhibits heat dissipation in the Si film and leads to increase in transistor temperature. This paper reports a simple a nd accurate characterization method for the self-heating effect (SHE) in SO I MOSFET. The ac output conductance at a chosen bias point is measured at s everal frequencies to determine the thermal resistance (R-th) and thermal c apacitance (C-th) associated with the SOI device. This methodology is impor tant to remove the misleadingly large self-heating effect from the de T-V d ata in device modeling. Not correcting for SHE mag lead to significant erro r in circuit simulation. After SHE is accounted for, the frequency-dependen t SHE may be disabled in circuit simulation without sacrificing the accurac y, thus providing faster circuit simulation for high-frequency circuits.