Novel low-temperature C-V technique for MOS doping profile determination near the Si/SiO2 interface

An inverse modeling technique for doping profile extraction from MOS C-V me asurements is presented. The method exploits the "kink" effect observed nea r flat bands in low-temperature C-V curves to accurately estimate the dopan t concentration at the oxide-silicon surface, The inverse modeling approach , based on a self-consistent Schrodinger-Poisson solver, overcomes the limi tations of previous analytical methods, The accuracy of the doping extracti on is demonstrated by successfully reconstructing doping profiles from simu lated C-V curves, including abrupt variations of doping in the vicinity of the oxide interface. When applied to experimental data from boron- and phos phorus-doped samples, the technique is shown to provide a substantial impro vement in resolution with respect to room-temperature C-V measurements.