Using porous silicon as semi-insulating substrate for beta-SiC high temperature optical-sensing devices

This work demonstrates the availability of using porous silicon as semi-ins ulating substrate for beta -SiC high temperature optical sensing devices. A h ISM structure was fabricated both on porous silicon substrate and conven tional silicon substrate, respectively. Experimental results show the optic al current ratio can he improved up to 400% at room temperature and 3000% a t 200 degreesC operating temperature, respectively, with the porous silicon substrate.