Z. Chen et al., Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study, IEEE DEVICE, 48(4), 2001, pp. 813-815
Several new phenomena are observed comparing the ac stress with the de stre
ss. In the initial stress period (< 30 s), the deuterium isotope effect is
smaller for ac stress than for de stress, which is ascribed to the hole inj
ection. In the final stress stage (> 10(4) s), the saturation of the G, deg
radation stops and the G, degradation starts to increase again for ac stres
s, which is probably due to the hole trapping.