Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Several new phenomena are observed comparing the ac stress with the de stre ss. In the initial stress period (< 30 s), the deuterium isotope effect is smaller for ac stress than for de stress, which is ascribed to the hole inj ection. In the final stress stage (> 10(4) s), the saturation of the G, deg radation stops and the G, degradation starts to increase again for ac stres s, which is probably due to the hole trapping.