Fast programming/erasing of thin-oxide EEPROMs

Authors
Versari, R Pieracci, A Ricco, B
Citation
R. Versari et al., Fast programming/erasing of thin-oxide EEPROMs, IEEE DEVICE, 48(4), 2001, pp. 817-819
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
4
Year of publication
2001
Pages
817 - 819
Database
ISI
SICI code
0018-9383(200104)48:4<817:FPOTE>2.0.ZU;2-1
Abstract
This brief demonstrates that conventional thin-oxide EEPROM cells can be pr ogrammed (erased) in the nanosecond time scale with voltages lower than 18 V still featuring data retention times of the order of a few hours after 10 0K program/erase (P/E) cycles, Our results suggest that thin-oxide nonvolat ile (NV) memory; devices can be suitable for fast read/write dynamic applic ations, at least when high cycling endurance is not a primary specification .