DC and high-frequency characteristics of GaN-based IMPATTs

Authors
Panda, AK Pavlidis, D Alekseev, E
Citation
Ak. Panda et al., DC and high-frequency characteristics of GaN-based IMPATTs, IEEE DEVICE, 48(4), 2001, pp. 820-823
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
4
Year of publication
2001
Pages
820 - 823
Database
ISI
SICI code
0018-9383(200104)48:4<820:DAHCOG>2.0.ZU;2-J
Abstract
The dynamic characteristics of Wurtzite (Wz) phase and zincblende (Znb) pha se GaN IMPATTs are reported at D-band and compared with Si and GaAs-based I MPATT devices at the same operating conditions and frequency of operations. It is shown that GaN-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.