Integrated sensor and electronic circuits in fully depleted SOI technologyfor high-temperature applications

Authors
Demeus, L Dessard, V Viviani, A Andriaensen, S Flandre, D
Citation
L. Demeus et al., Integrated sensor and electronic circuits in fully depleted SOI technologyfor high-temperature applications, IEEE IND E, 48(2), 2001, pp. 272-280
Citations number
29
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
ISSN journal
02780046 → ACNP
Volume
48
Issue
2
Year of publication
2001
Pages
272 - 280
Database
ISI
SICI code
0278-0046(200104)48:2<272:ISAECI>2.0.ZU;2-M
Abstract
The electrical characteristics of devices and circuits realized in CMOS tec hnology on silicon-on-insulator (SOI) substrates and operated at elevated t emperatures are presented and compared with results obtained using other ma terials (bulk Si, GaAs, SiC). It is demonstrated that fully depleted CMOS o n SOI is the most suitable process for the realization of complex electroni c circuits to be operated in high-temperature environments, up to more than 300 degreesC.