SiC devices for advanced power and high-temperature applications

Authors
Wondrak, W Held, R Niemann, E Schmid, U
Citation
W. Wondrak et al., SiC devices for advanced power and high-temperature applications, IEEE IND E, 48(2), 2001, pp. 307-308
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
ISSN journal
02780046 → ACNP
Volume
48
Issue
2
Year of publication
2001
Pages
307 - 308
Database
ISI
SICI code
0278-0046(200104)48:2<307:SDFAPA>2.0.ZU;2-G
Abstract
Silicon carbide (SiC) process technology has made rapid progress, resulting in the realization of very promising electronic devices and sensors, enabl ing advanced solutions in power industry and mobile systems. In particular, for electronics working under harsh environmental conditions, SiC devices reach unprecedented performance. Transfer to production has already started for some applications.