Accurate modeling of high-Q spiral inductors in thin-film multilayer technology for wireless telecommunication applications

In the current trend toward portable applications, high-Q integrated induct ors are gaining a lot of importance. Using thin-film multilayer or multichi p-module-deposition technology, high-Q circular inductors for RF and microw ave applications may be integrated efficiently Their quality factors may go up to over 100, In this paper, an accurate analytical model for such multi turn circular spiral inductors embedded in a thin-film multilayer topology is presented. Starting from the geometrical parameters, the model provides an accurate prediction of the inductance value, Q factor and frequency beha vior of the inductor, This allows a "first-time-right" realization of the i ntegrated component and provides opportunities for fast optimization of the inductors, Finally, the presented high-Q inductors have been used in vario us integrated RF and microwave subsystems for wireless applications, of whi ch a number are discussed at the end of this paper.