RF W-band wafer-to-wafer transition

Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer, For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides printed on the adjacent faces of two vertically stacked silicon wafers. In addition to serving as a versatile low-temperature thermocompression wafer bond, loss of approximately 0.1 dB is measured for this novel compact packa ged wafer-to-wafer transition from 75 to 110 GHz.