Laser-induced changes in the photoelectric properties of MnxHg1-xTe crystals

The application of pulsed laser irradiation to photoconductive n-MnxHg1-xTe crystals was investigated as a possible procedure for modifying their phot oelectric characteristics and increasing the photosensitivity. The photocon ductivity spectra and the temperature dependences of the excess carrier lif etime of MnxHg1-xTe crystals, subjected to laser irradiation with nanosecon d ruby laser pulses, were studied. It was found that a range of energy dens ity of laser pulses can be chosen to decrease the surface recombination rat e and to increase the photosensitivity of the crystals. Changes in the phot oelectric properties of the irradiated samples are attributed to the laser- stimulated cleaning of the surface as well as to modification of the defect structure of MnxHg1-xTe crystals. (C) 2001 Elsevier Science B.V. All right s reserved.