X-ray photoelectron spectroscopy was used to study the electronic structure
of bulk GdF3, Gd2In acid Gd5Si4 The structure of the Gd photoemission core
level multiplets was analysed and compared to that one obtained for Gd met
al. The line-width and the intensity ratio of the component lines within th
e multiplets were found to be dependent on the compound. The observed effec
ts have been related to the variation of the valence band structure and var
ious hybrydization effects between the 4f electrons and conduction or valen
ce ones. The most modified multiplet structure in relation to Gd metal was
found in the ionic compound GdF3.