Lifetime measurements by photoconductance techniques in wafers immersed ina passivating liquid

Citation
R. Lago-aurrekoetxea et al., Lifetime measurements by photoconductance techniques in wafers immersed ina passivating liquid, J ELCHEM SO, 148(4), 2001, pp. G200-G206
Citations number
27
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
148
Issue
4
Year of publication
2001
Pages
G200 - G206
Database
ISI
SICI code
0013-4651(200104)148:4<G200:LMBPTI>2.0.ZU;2-L
Abstract
Lifetime measurement procedures with transient photoconductance decay and q uasi-steady-state photoconductance techniques for wafers immersed in a pass ivating liquid are presented in this paper, in situ calibration methods are proposed based on the comparison between the output of both techniques on the same sample. Precautions concerning the handling of the passivating liq uid are described. Resolution of the electron and hole lifetimes is perform ed in a set of samples. (C) 2001 The Electrochemical Society.