A novel metal field plate edge termination for power devices

A new termination structure, which incorporates metal field plate over ever y alternate low doped p well ring is presented for planar power devices. Th is structure is designed to control the punch through voltage between rings to increase the blocking voltage capability while reducing the edge termin ation area. Measured results based on a 2 kV process technology are consist ent with those of numerical modelling and demonstrate that 88% of the plane parallel breakdown voltage can be achieved within 600 mum while maintainin g less sensitivity to fixed oxide charge. (C) 2001 Elsevier Science Ltd. Al l rights reserved.