In this paper, a new quasi-TEM capacitance and inductance analysis of multi
conductor multilayer interconnects is successfully demonstrated by using th
e dielectric Green's function and boundary integral equation approach. Pres
ented is the case with an arbitrary number of dielectric layers and with ze
ro-thickness conductors in the upper most layer. Since the method has been
developed for application on microelectronic interconnect structures, we us
e the Galerkin method for constant charge distribution on the conductors to
generate the numerical results. Since the silicon substrate has a substant
ial effect on the inductance parameter, it is taken into account to determi
ne the transmission line parameters. Studies conducted here show that ignor
ing the silicon substrate leads to erroneous results in estimating the indu
ctance parameter of the structure. Since the procedure is very efficient as
well as accurate, it will be a very useful tool in the practical calculati
ons for high-speed and high-density IC signal integrity verification. (C) 2
001 Elsevier Science Ltd. All rights reserved.