H. Gossner et al., Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology, MICROEL REL, 41(3), 2001, pp. 385-393
Highly efficient electrostatic discharge (ESD) protection structures with a
sustaining voltage >40 V are realized in a smart power technology. They gu
arantee an excellent ESD protection at high voltage pins without the danger
of transient latch-up. Compared to the vertical npn transistor a shift of
the sustaining voltage of 21 V has been achieved purely by a layout modific
ation of the buried layer. The high ESD performance has been proven on prod
uct level by an ESD hardness of >8 kV (HBM). (C) 2001 Elsevier Science Ltd.
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