Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology

Citation
H. Gossner et al., Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology, MICROEL REL, 41(3), 2001, pp. 385-393
Citations number
19
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
3
Year of publication
2001
Pages
385 - 393
Database
ISI
SICI code
0026-2714(200103)41:3<385:WRCOTS>2.0.ZU;2-N
Abstract
Highly efficient electrostatic discharge (ESD) protection structures with a sustaining voltage >40 V are realized in a smart power technology. They gu arantee an excellent ESD protection at high voltage pins without the danger of transient latch-up. Compared to the vertical npn transistor a shift of the sustaining voltage of 21 V has been achieved purely by a layout modific ation of the buried layer. The high ESD performance has been proven on prod uct level by an ESD hardness of >8 kV (HBM). (C) 2001 Elsevier Science Ltd. All rights reserved.