Transport and noise properties of CdTe(Cl) crystals

Citation
P. Schauer et al., Transport and noise properties of CdTe(Cl) crystals, MICROEL REL, 41(3), 2001, pp. 431-436
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
3
Year of publication
2001
Pages
431 - 436
Database
ISI
SICI code
0026-2714(200103)41:3<431:TANPOC>2.0.ZU;2-N
Abstract
Experimental studies of transport and noise characteristics of CdTe (Cl dop ed) crystals, prepared by travelling heater method, have been carried out. The basic material is of p-type with p = 1.8 x 10(14) m(-3), mu (h) = 0.006 5 m(2) V-1 s(-1), mu (o) = 0.13 m(2) V-1 s(-1). The current and noise spect ral density was measured as a function of the sample illumination, voltages across the sample and incident light wavelengths. Two types of effective c harge carrier mobility are assumed: namely, the effective transport mobilit y, which is 0.065 m(2) V-1 s(-1) and the effective noise mobility, which re aches a value of 0.125 m(2) V-1 s(-1), both for high illumination. Under th e same conditions, the density of light generated charge carrier pairs is 1 .7 x 10(15) m(-3). Experimental results are in a good agreement with the fo ur-level recombination model. The values of 1/f noise parameter alpha range from 4 x 10(-4) to 2.5 x 10(-3). The alpha parameter grows with almost the photocurrent square root. The signal-to-noise ratio improves if the electr ic field strength in the CdTe detector is set to a higher value. (C) 2001 E lsevier Science Ltd. All rights reserved.