Laser bending of etched silicon microstructures

Citation
E. Gartner et al., Laser bending of etched silicon microstructures, MICROSYST T, 7(1), 2001, pp. 23-26
Citations number
8
Categorie Soggetti
Instrumentation & Measurement
Journal title
MICROSYSTEM TECHNOLOGIES
ISSN journal
09467076 → ACNP
Volume
7
Issue
1
Year of publication
2001
Pages
23 - 26
Database
ISI
SICI code
0946-7076(200103)7:1<23:LBOESM>2.0.ZU;2-#
Abstract
The process of contactless laser bending using the laser induced thermal st resses that up to this moment is performed with steels and other metal allo ys is firstly applied to silicon microstructural elements. One-side-fastene d Si beams prepared by anisotropic wet etching were locally heated by a Nd: YAG laser. The beams were bent without additional tools towards the inciden t laser beam. Bending angles up to 90 degrees are realizable. The degree of bending is strongly dependent on the used laser parameters, the position o f heating and the number and distance of the laser scans.