The observation of interdiffusion imperfection in vacuum-deposited optical
thin films is reported. We measured the diffusion lengths of interdiffusion
in dielectric thin films of typical combinations of coating materials (TiO
2-SiO2 and TiO2-MgF2) by analyzing the atomic concentration data along the
depth obtained with X-ray photoelectron spectroscopy technique. The resulta
nt diffusion lengths in the deposited layers of dielectric coating material
s are not small, hence the effects of interdiffusion should be taken into a
ccount in the design of optical filters. (C) 2001 Published by Elsevier Sci
ence B.V.