Interdiffusion in vacuum-deposited dielectric thin films

Citation
Yj. Lee et al., Interdiffusion in vacuum-deposited dielectric thin films, OPT COMMUN, 190(1-6), 2001, pp. 211-220
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS COMMUNICATIONS
ISSN journal
00304018 → ACNP
Volume
190
Issue
1-6
Year of publication
2001
Pages
211 - 220
Database
ISI
SICI code
0030-4018(20010401)190:1-6<211:IIVDTF>2.0.ZU;2-M
Abstract
The observation of interdiffusion imperfection in vacuum-deposited optical thin films is reported. We measured the diffusion lengths of interdiffusion in dielectric thin films of typical combinations of coating materials (TiO 2-SiO2 and TiO2-MgF2) by analyzing the atomic concentration data along the depth obtained with X-ray photoelectron spectroscopy technique. The resulta nt diffusion lengths in the deposited layers of dielectric coating material s are not small, hence the effects of interdiffusion should be taken into a ccount in the design of optical filters. (C) 2001 Published by Elsevier Sci ence B.V.