Preparation of silicon carbide by electrospraying of a polymeric precursor

Silicon carbide (SiC) coatings and films have been prepared for the first t ime by electrostatic atomization of a solution of a polymeric precursor and deposition on to alumina and zirconia substrates. The deposits were heated to 1300 degreesC prior to their examination by X-ray energy-dispersive spe ctra and selected-area diffraction in scanning and transmission electron mi croscopes. The results show that these coatings and films are crystalline a nd probably consist of co-existing alpha -SiC and beta -SiC phases.